FCA76N60N n-channel mosfet ?2010 fairchild semiconductor corporation FCA76N60N rev. c0 www.fairchildsemi.com 1 march 2013 fca76n60 n n-channel supremos ? mosfet 600 v, 76 a, 36 m features ?r ds(on) = 28 m (typ.)@ v gs = 10 v, i d = 38 a ? ultra low gate charge (typ. q g = 218 nc) ? low effective output capacitance (typ. c oss .eff = 914 pf) ? 100% avalanche tested ? rohs compliant application ? solar inverter ? ac-dc power supply description the supremos ? mosfet is fairchild semiconductor ? ?s next generation of high voltage super-junction (sj) technology employing a deep trench filling proces s that differentiates it from the conventional sj mosfets. this advanced technology and precise process control provi des lowest rsp on-resistance, superior switching performance and ruggedness. supremos mosfet is suitable for high frequency switching power con- verter applications such as pfc, server/telecom power, fpd tv power, atx power and industrial power applications. gs d to-3pn d g s d mosfet maximum ratings t c = 25 o c unless otherwise noted* thermal characteristics symbol parameter FCA76N60N unit v dss drain to source voltage 600 v v gss gate to source voltage 30 v i d drain current -continuous (t c = 25 o c) 76 a -continuous (t c = 100 o c) 48.1 i dm drain current -pulsed (note 1) 228 a e as single pulsed avalanche energy (note 2) 8022 mj i ar avalanche current 76 a e ar repetitive avalanche energy 5.40 mj dv/dt mosfet dv/dt ruggedness (note 3) 100 v/ns peak diode recovery dv/dt 12 p d power dissipation (t c = 25 o c) 543 w -derate above 25 o c5.40w/ o c t j , t stg operating and storage temperature range -55 to +150 o c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 o c symbol parameter FCA76N60N unit r jc thermal resistance, junction to case 0.23 o c/w r js thermal resistance, case to heat sink (typical) 0.24 r ja thermal resistance, junction to ambient 40 *drain current limited by maximum junction temperature
FCA76N60N n-channel mosfet ?2010 fairchild semiconductor corporation FCA76N60N rev. c0 www.fairchildsemi.com 2 package marking and ordering information t c = 25 o c unless otherwise noted electrical characteristics off characteristics on characteristics dynamic characteristics switching characteristics drain-source diode characteristics device marking device package reel size tape width quantity FCA76N60N FCA76N60N to-3pn - - 30 symbol parameter test conditions min. typ. max. unit bv dss drain to source breakdown voltage i d = 1 ma, v gs = 0 v,t j = 25 o c600- -v bv dss t j breakdown voltage temperature coefficient i d = 1 ma, referenced to 25 o c - 0.73 - v/ o c i dss zero gate voltage drain current v ds = 480 v, v gs = 0 v - - 10 a v ds = 480 v, t j = 125 o c - - 100 i gss gate to body leakage current v gs = 30 v, v ds = 0 v - - 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 250 a 2.0 - 4.0 v r ds(on) static drain to source on resistance v gs = 10 v, i d = 38 a - 28.5 36.0 m g fs forward transconductance v ds = 40 v, i d = 38 a - 88 - s c iss input capacitance v ds = 100 v, v gs = 0 v f = 1 mhz - 9310 12385 pf c oss output capacitance - 370 495 pf c rss reverse transfer capacitance - 3.1 5.0 pf c oss output capacitance v ds = 380 v, v gs = 0 v, f = 1 mhz - 196 - pf c oss eff. effective output capacitance v ds = 0 v to 380 v, v gs = 0 v - 914 - pf q g(tot) total gate charge at 10v v ds = 380 v, i d = 38 a, v gs = 10 v (note 4) - 218 285 nc q gs gate to source gate charge - 39 - nc q gd gate to drain ?miller? charge - 66 - nc esr equivalent series resistance (g-s) drain open, f=1 mhz - 1.0 - t d(on) turn-on delay time v dd = 380 v, i d = 38 a r g = 4.7 (note 4) -3478ns t r turn-on rise time - 24 58 ns t d(off) turn-off delay time - 235 480 ns t f turn-off fall time - 32 74 ns i s maximum continuous drain to source diode forward current - - 76 a i sm maximum pulsed drain to source diode forward current - - 228 a v sd drain to source diode forward voltage v gs = 0 v, i sd = 38 a - - 1.2 v t rr reverse recovery time v gs = 0 v, i sd = 38 a di f /dt = 100 a/ s - 613 - ns q rr reverse recovery charge - 16 - c notes: 1. repetitive rating: pulse width limi ted by maximum junction temperature 2. i as = 25.3 a, r g = 25 , starting t j = 25 c 3. i sd 76 a, di/dt 200 a/ s, v dd 380 v, starting t j = 25 c 4. essentially independent of operating temperature typical characteristics
FCA76N60N n-channel mosfet ?2010 fairchild semiconductor corporation FCA76N60N rev. c0 www.fairchildsemi.com 3 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 0.1 1 10 20 1 10 100 1000 *notes: 1. 250 s pulse test 2. t c = 25 o c v gs = 15.0 v 10.0 v 6.0 v 5.5 v 5.0 v 4.5 v i d , drain current[a] v ds , drain-source voltage[v] 2468 1 10 100 1000 -55 o c 150 o c *notes: 1. v ds = 20v 2. 250 s pulse test 25 o c i d , drain current[a] v gs , gate-source voltage[v] 0 50 100 150 200 250 300 25 30 35 40 45 50 *notes: t c = 25 o c v gs = 20v v gs = 10v r ds(on) [ m ] , drain-source on-resistance i d , drain current [a] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 10 100 1000 *notes: 1. v gs = 0v 2. 250 s pulse test 150 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 0 40 80 120 160 200 240 0 2 4 6 8 10 v ds = 480v v ds = 300v *notes: i d = 38a v ds = 120v v gs , gate-source voltage [v] q g , total gate charge [nc] 0.1 1 10 100 600 1 10 100 1000 10000 100000 c oss c iss c iss = c gs + c gd ( c ds = shorted ) c oss = c ds + c gd c rss = c gd *notes: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v]
FCA76N60N n-channel mosfet ?2010 fairchild semiconductor corporation FCA76N60N rev. c0 www.fairchildsemi.com 4 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 11. transient thermal response curve -80 -40 0 40 80 120 160 0.8 0.9 1.0 1.1 1.2 *notes: 1. v gs = 0v 2. i d = 1ma bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c ] r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c ] i d , drain current [a] t c , case temperature [ o c ] s 100 s 1ms 10ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) *notes: 1. t c = 25 o c 2. t j = 150 o c 3. single pulse dc 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 0.005 0.01 0.1 1 0.01 0.1 0.2 0.05 0.02 *notes: 1. z jc (t) = 0.23 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse thermal response [ z jc ] rectangular pulse duration [sec] t 1 p dm t 2
FCA76N60N n-channel mosfet ?2010 fairchild semiconductor corporation FCA76N60N rev. c0 www.fairchildsemi.com 5 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
FCA76N60N n-channel mosfet ?2010 fairchild semiconductor corporation FCA76N60N rev. c0 www.fairchildsemi.com 6 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
FCA76N60N n-channel mosfet ?2010 fairchild semiconductor corporation FCA76N60N rev. c0 www.fairchildsemi.com 7 mechanical dimensions dimensions in millimeters to-3pn
FCA76N60N n-channel mosfet ?2010 fairchild semiconductor corporation FCA76N60N rev. c0 www.fairchildsemi.com 8 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairch ild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume an y liability arising out of th e application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s wo rldwide terms and conditions , specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized fo r use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used here in: 1. life support devices or systems ar e devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a sign ificant injury of the user. 2. a critical component in any com ponent of a life support, device, or system whose failure to perform can be reasonably ex pected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms 2cool? 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